Improvement of Mg-Doped GaN with Shutter-Controlled Process in Plasma-Assisted Molecular Beam Epitaxy

Ga-Doped ZnO Films Grown on GaN Templates by Plasma-Assisted Molecular-Beam Epitaxy

Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy

Low-temperature photoluminescence (PL) and optically detected magnetic resonance (ODMR) at 24GHz have been performed on a series of MBE-grown Mg-doped (10–10 cm ) GaN homoepitaxial layers. High-resolution PL at 5K revealed intense bandedge emission with narrow linewidths (0.2–0.4meV) attributed to annihilation of excitons bound to shallow Mg acceptors. In contrast to many previous reports for G...

Properties of GaN epitaxial layers grown on 6HSiC( 0001) by plasma-assisted molecular beam epitaxy

The structural, electrical, and optical properties of GaN grown on 6HSiC(0001) substrates by molecular beam epitaxy are studied. Suitable substrate preparation and growth conditions are found to greatly improve the structural quality of the films. Threading dislocation densities of about 1 × 10 cm for edge dislocations and < 1 × 10 cm for screw dislocations are achieved in GaN films of 0.8 μm t...

Carbon Doping of <10-11> GaN by Plasma-Assisted Molecular Beam Epitaxy

Magnesium (Mg) is the most commonly used acceptor dopant in gallium nitride (GaN) devices. Acting as a deep acceptor with an activation energy of ~ 200 meV, Mg can introduce electrical and optical complications. Carbon has been demonstrated to be a possible alternative acceptor dopant atom with a lower activation energy [1]. Carbon-doped GaN (GaN:C) samples were homoepitaxially grown on <10-11>...

Electrically conductive ZnO/GaN distributed Bragg reflectors grown by hybrid plasma-assisted molecular beam epitaxy

III-nitride-based vertical-cavity surface-emitting lasers have so far used intracavity contacting schemes since electrically conductive distributed Bragg reflectors (DBRs) have been difficult to achieve. A promising material combination for conductive DBRs is ZnO/GaN due to the small conduction band offset and ease of n-type doping. In addition, this combination offers a small lattice mismatch ...